ESD-improvement comparisons of HV n-/p-LDMOS components by the bulk modulations
In: IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia); (2017-06-01) S. 2182-2186
Online
Konferenz
Zugriff:
Titel: |
ESD-improvement comparisons of HV n-/p-LDMOS components by the bulk modulations
|
---|---|
Autor/in / Beteiligte Person: | Chen, Shen-Li ; Chen, Kuei-Jyun ; Wu, Yi-Cih ; Yang, Chih-Hung ; Lin, Yu-Lin ; Chiu, Yi-Hao ; Yen, Chih-Ying ; Chao, Yi-Hao ; Kuo, Chun-Ting ; Lin, Jia-Ming ; Lo, Jen-Hao |
Link: | |
Quelle: | IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia); (2017-06-01) S. 2182-2186 |
Veröffentlichung: | 2017 |
Medientyp: | Konferenz |
ISBN: | 978-1-5090-5157-1 (print) |
DOI: | 10.1109/IFEEC.2017.7992390 |
Sonstiges: |
|