Robustness-Improved ESD Protection Devices With Low Leakage Using Middle Silicon Layer in Double SOI Technology
In: IEEE Transactions on Electron Devices, Jg. 71 (2024-06-01), Heft 6, S. 3504-3509
Online
academicJournal
Zugriff:
Titel: |
Robustness-Improved ESD Protection Devices With Low Leakage Using Middle Silicon Layer in Double SOI Technology
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Autor/in / Beteiligte Person: | Zhang, C. ; Li, X. ; Liu, F. ; Li, J. ; Chen, S. ; Wang, Y. ; Wang, J. ; Gao, J. ; Wan, J. ; Cristoloveanu, S. ; Han, Z. ; Li, B. ; Ye, T. |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 71 (2024-06-01), Heft 6, S. 3504-3509 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2024.3389940 |
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