Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice
In: ISSN: 0304-3991 ; Ultramicroscopy ; https://hal.science/hal-04129547 ; Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩, 2023
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Zugriff:
International audience ; A method for the reciprocal space treatment of high-resolution transmission electron microscopy (HR-TEM) and high-resolution scanning transmission electron microscopy (HR-STEM) images has been developed. Named “Absolute strain” (AbStrain), it allows for quantification and mapping of interplanar distances and angles, displacement fields and strain tensor components with reference to a user-defined Bravais lattice and with their corrections from the image distortions specific to HR-TEM and HR-STEM imaging. We provide the corresponding mathematical formalism. AbStrain goes beyond the restriction of the existing method known as geometric phase analysis by enabling direct analysis of the area of interest without the need for reference lattice fringes of a similar crystal structure on the same field of view. In addition, for the case of a crystal composed of two or more types of atoms, each with its own sub-structure constraint, we developed a method named “Relative displacement” for extracting sub-lattice fringes associated to one type of atom and measuring atomic columns displacements associated to each sub-structure with reference to a Bravais lattice or to another sub-structure. The successful application of AbStrain and Relative displacement to HR-STEM images of functional oxide ferroelectric heterostructures is demonstrated.
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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice
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Autor/in / Beteiligte Person: | Cherkashin, Nikolay ; Louiset, A. ; Chmielewski, A. ; Kim, D.J. ; Dubourdieu, C. ; Schamm-Chardon, S. ; Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM) ; Centre d'élaboration de matériaux et d'études structurales (CEMES) ; Institut National des Sciences Appliquées - Toulouse (INSA Toulouse) ; Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT) ; Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3) ; Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP) ; Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3) ; Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP) ; Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse) ; Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS) ; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH = Helmholtz Centre Berlin for Materials and Energy = Centre Helmholtz de Berlin pour les matériaux et l'énergie (HZB) ; Helmholtz-Gemeinschaft = Helmholtz Association ; Freie Universität Berlin ; ANR-19-CE24-0027,FEAT,Ferroélectriques à l'échelle nanométrique sur silicium(2019) ; ANR-20-CE24-0008,BePolar,Remède aux couches polaires mortes et aux courants de fuites dans les varactors BST pour les télécommunications NFC et 5G(2020) |
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Zeitschrift: | ISSN: 0304-3991 ; Ultramicroscopy ; https://hal.science/hal-04129547 ; Ultramicroscopy, 2023, 253, pp.113778. ⟨10.1016/j.ultramic.2023.113778⟩, 2023 |
Veröffentlichung: | HAL CCSD ; Elsevier, 2023 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.ultramic.2023.113778 |
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