Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque
In: IEEE Electron Device Letters, Jg. 45 (2024), Heft 5, S. 921-924
Online
serialPeriodical
Zugriff:
The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA) has great potential to be the next-generation writing method for low-power, fast-speed, and high-density memory applications. In this letter, we first experimentally demonstrate field-free voltage-gated SOT switching in IrMn-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Then we fabricate a memory array that integrates multiple MTJs on a shared IrMn strip. When a gate voltage of 0.8 V is applied to an MTJ in the array, the SOT critical current density decreases by 70%, resulting in a substantial 91% reduction in total power consumption. Through this voltage-gated SOT switching, selective data writing in the MTJ array is accomplished. Moreover, the endurance of more than ${1} \times {10} ^{{12}}$ and the write error rate below ${8} \times {10} ^{-{5}}$ are achieved. These findings demonstrate the high performance of voltage-gated SOT devices and contribute to its practical application in magnetic random-access memory.
Titel: |
Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque
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Autor/in / Beteiligte Person: | Li, Weixiang ; Liu, Zhaochun ; Peng, Shouzhong ; Lu, Jiaqi ; Liu, Jiahao ; Li, Xinyuan ; Lu, Shiyang ; Otani, Yoshichika ; Zhao, Weisheng |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 45 (2024), Heft 5, S. 921-924 |
Veröffentlichung: | 2024 |
Medientyp: | serialPeriodical |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2024.3369616 |
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