A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event.
In: 2012 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits; 1/ 1/2012, p1-5, 5p
Online
Konferenz
Zugriff:
With the channel current, the driver acts as the trigger device for I/O during ESD zapping event. The driver location in I/O transistor plays a key role in I/O ESD protection. The I/O will fail at low-voltage ESD zapping event if its driver is located at transistor edge, while it can pass the high-voltage ESD zapping if its driver is located at transistor center. [ABSTRACT FROM PUBLISHER]
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Titel: |
A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event.
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Autor/in / Beteiligte Person: | Lee, Jian-Hsing ; Shih, J. R. ; Yang, Dao-Hong ; Kuan, Hing-Poh |
Link: | |
Quelle: | 2012 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits; 1/ 1/2012, p1-5, 5p |
Veröffentlichung: | 2012 |
Medientyp: | Konferenz |
ISBN: | 978-1-4673-0980-6 (print) |
DOI: | 10.1109/IPFA.2012.6306259 |
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