The Influence of N-Type Buried Layer on SCR ESD Protection Devices.
In: IEEE Transactions on Device & Materials Reliability, Jg. 20 (2020-12-01), Heft 4, S. 658-666
Online
academicJournal
Zugriff:
This article investigates the effect of N-type buried layer (NBL) on the holding voltage and failure current of conventional low voltage triggered silicon-controlled rectifier (LVTSCR) and conventional dual directional silicon-controlled rectifier (DDSCR) devices. LVTSCR and DDSCR with N-type buried layer are fabricated on a 0.18- $\mu \text{m}$ Bipolar CMOS DMOS (BCD) technology. In order to verify and predict the effect of N-type buried layer on the characteristics of ESD protection devices, a transmission line pulse (TLP) testing system and a 2-dimension device simulation platform have been used in this work. According to the measurement results, the holding voltage (${\mathrm{ V}}_{\mathrm{ h}}$) and failure current (${\mathrm{ I}}_{\mathrm{ t2}}$) of the LVTSCR and DDSCR can be drastically improved by adding N-type buried layer. [ABSTRACT FROM AUTHOR]
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Titel: |
The Influence of N-Type Buried Layer on SCR ESD Protection Devices.
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Autor/in / Beteiligte Person: | Wang, Yang ; Chen, Xijun ; Jia, Dandan ; Lu, Jun ; Wei, Weipeng ; Dong, Peng |
Link: | |
Zeitschrift: | IEEE Transactions on Device & Materials Reliability, Jg. 20 (2020-12-01), Heft 4, S. 658-666 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 1530-4388 (print) |
DOI: | 10.1109/TDMR.2020.3021239 |
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