Gate process control using spectroscopic ellipsometry.
In: Solid State Technology, Jg. 47 (2004-04-01), Heft 4, S. 37-39
academicJournal
Zugriff:
Introduces the logic devices manufactured by Texas Instruments Inc. in San Jose, California. Assessment on the quality of the device; Product specifications; Details on the physical dimension of the polysilicon gate.
Titel: |
Gate process control using spectroscopic ellipsometry.
|
---|---|
Autor/in / Beteiligte Person: | Hodges, J. Scott ; Yu-Lun Lin, J. Scott ; Peters, Robert M. |
Zeitschrift: | Solid State Technology, Jg. 47 (2004-04-01), Heft 4, S. 37-39 |
Veröffentlichung: | 2004 |
Medientyp: | academicJournal |
ISSN: | 0038-111X (print) |
Schlagwort: |
|
Sonstiges: |
|